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Infineon Unveils CoolSiC MOSFET G2

Infineon Unveils Second Generation CoolSiC MOSFET

Infineon Technologies AG, based in Munich, Germany, has just announced a significant advancement in semiconductor technology with the launch of the second generation of its silicon carbide (SiC) MOSFET trench technology, the CoolSiC MOSFET 650V and 1200V. This innovation promises to elevate energy efficiency standards across various power semiconductor applications.

Advancements in Energy Efficiency

The new generation of Infineon’s CoolSiC MOSFET devices, offering 650V and 1200V, exhibits substantial improvements in stored energies and charges, achieving up to a 20% optimization over its previous generation. This advancement not only retains but enhances levels of quality and reliability, marking a milestone in the pursuit of more efficient and sustainable energy management solutions.

CoolSiC MOSFET G2 technology exploits the unique capabilities of silicon carbide to minimize energy loss, resulting in superior energy efficiency during power conversion. This directly benefits critical sectors such as photovoltaics, energy storage, DC electric vehicle (EV) charging, motor drives, and industrial power supplies.

Transformative and Sustainable Applications

Notably, DC fast-charging stations for EVs equipped with CoolSiC G2 technology can achieve up to 10% less energy loss compared to previous generations, allowing for higher charging capacity without compromising design. Additionally, traction inverters based on CoolSiC G2 devices can extend the range of electric vehicles. In the realm of renewable energies, solar inverters utilizing CoolSiC G2 enable more compact designs while maintaining high power output, translating to lower cost per watt.

Dr. Peter Wawer, President of the Green Industrial Power Division at Infineon, highlights the importance of these innovations: “Megatrends demand new and efficient ways to generate, transmit, and consume energy. With the CoolSiC MOSFET G2, Infineon elevates silicon carbide performance to a new level, enabling the accelerated design of more cost-optimized, compact, reliable, and highly efficient systems that save energy and reduce CO2 for every watt installed in the field.”

Furthermore, Infineon’s CoolSiC MOSFET trench technology optimizes design for greater efficiency and reliability compared to currently available SiC MOSFET technologies. The integration of the .XT packaging technology further enhances the potential of CoolSiC G2-based designs, improving thermal conductivity, assembly control, and performance.

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