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Onsemi introduces new 1200V IGBTs

Onsemi introduces new 1200V IGBTs for efficient power management

Onsemi, a leading provider of power management solutions, has recently introduced its latest range of 1200 V Trench Field Stop VII (FS7) IGBTs. These devices are designed to improve efficiency in fast switching applications, particularly in energy infrastructure applications such as solar inverters, uninterruptible power supplies (UPS), energy storage, and EV charging power conversion.

The FS7 IGBTs are used to boost input to high voltage (Boost stage) as well as the inverter to provide an AC output in high switching frequency energy infrastructure applications. The low switching losses of FS7 devices enable higher switching frequencies, which reduces the size of magnetic components, increases power density, and lowers system cost.

For high-power energy infrastructure applications, the positive temperature coefficient of FS7 devices enables easy parallel operation. “As efficiency is extremely critical in all high switching frequency energy infrastructure applications, we focused on reducing turn-off switching losses and providing the best switching performance in this new range of IGBTs,” says Asif Jakwani, VP of the Advanced Power Division at Onsemi.

The FS7 devices include high-speed (S-series) and medium-speed (R-series) options. All devices include an optimized diode for low VF, tuned switching softness, and can operate with junction temperatures (TJ) up to 175°C.

The S-Series devices, like FGY75T120SWD, offer the best switching performance among currently available 1200 V IGBTs in the market. Tested with currents up to 7 times the rated value, this highly rugged IGBT platform also offers best-in-class latch-up immunity.

The R-Series is optimized for medium-speed switching applications, such as motor control and solid-state relay in which conduction losses are dominant occurs. FGY100T120RWD shows a VCESAT as low as 1.45 V at 100A, an improvement of 0.4 V over previous generation devices.

The FS7 devices are available in a range of package styles, including TO247-3L, TO247-4L, Power TO247-3L, and as bare die, giving designers flexibility and design options.

Overall, the new FS7 IGBTs from Onsemi offer a significant improvement in efficiency and performance for high switching frequency energy infrastructure applications. With the ability to reduce switching losses and increase power density, these devices are poised to play a critical role in the development of a more sustainable energy future.