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Samsung Launches 9th Gen V-NAND

Introduction to the Ninth Generation V-NAND

Samsung Electronics has announced the start of mass production of its 286-layer NAND flash memory chips, a technology that represents a 50% increase in bit density compared to its eighth-generation V-NAND technology. This new series, called the ninth generation V-NAND, is characterized by having the industry’s smallest cell size and thinnest mold, allowing it to remain competitive in a fiercely contested market.

Innovations and Improvements in Structure

Samsung’s new V-NAND incorporates significant innovations that improve product quality and reliability. Among these improvements are the elimination of useless channel holes and the creation of electronic pathways by stacking mold layers, which also maximizes manufacturing productivity by allowing simultaneous drilling of the highest number of cell layers in a double-stack structure. Additionally, the ninth generation V-NAND is equipped with the new NAND flash Toggle 5.1 interface, which improves data input and output speeds by 33%, reaching up to 3.2 gigabits per second (Gbps).

Outlook and Future Applications

With the launch of this technology, Samsung not only seeks to consolidate its position in the high-performance solid-state drive (SSD) market but also to expand its support for PCIe 5.0 and reduce energy consumption by 10%. SungHoi Hur, Head of Flash Product & Technology at Samsung’s memory business division, highlighted that the ninth generation V-NAND is the industry’s first and is designed to anticipate future applications and respond to the changing needs of NAND flash solutions, especially with the arrival of the artificial intelligence era.

Samsung will begin mass production of the 1Tb TLC V-NAND this month and the quad-level cell (QLC) model in the second half of the year.

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